Новосядлий СП, Терлецький АІ, Фрик ОБ. PHYSICAL-TECHNOLOGICAL ASPECTS OF SIMULATION OF SILICON AND GALLIUM ARSENIDE LOW-TEMPERATURE EPITAXIAL LAYERED STRUCTURES. Number [Internet]. 2019 Feb. 9 [cited 2025 Apr. 8];(1(45):63-79. Available from: https://pvntsh.nung.edu.ua/index.php/number/article/view/14