Новосядлий, Степан Петрович, et al. “PHYSICAL-TECHNOLOGICAL ASPECTS OF SIMULATION OF SILICON AND GALLIUM ARSENIDE LOW-TEMPERATURE EPITAXIAL LAYERED STRUCTURES”. PRECARPATHIAN BULLETIN OF THE SHEVCHENKO SCIENTIFIC SOCIETY. Number, no. 1(45), Feb. 2019, pp. 63-79, https://pvntsh.nung.edu.ua/index.php/number/article/view/14.