СТЕПАН ПЕТРОВИЧ; АНДРІЙ ІВАНОВИЧ; ОКСАНА БОГДАНІВНА. PHYSICAL-TECHNOLOGICAL ASPECTS OF SIMULATION OF SILICON AND GALLIUM ARSENIDE LOW-TEMPERATURE EPITAXIAL LAYERED STRUCTURES: Array. PRECARPATHIAN BULLETIN OF THE SHEVCHENKO SCIENTIFIC SOCIETY Number, [S. l.], n. 1(45), p. 63–79, 2019. Disponível em: https://pvntsh.nung.edu.ua/index.php/number/article/view/14. Acesso em: 2 feb. 2023.